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 CCD Area Image Sensor
MN39217FH
Diagonal 4.5 mm (type-1/4) 320k-pixel CCD Area Image Sensor
Overview
The MN39217FH is a 4.5 mm (type-1/4) interline transfer CCD (IT-CCD) solid state image sensor device. This device uses photodiodes in the optoelectric conversion section and CCDs for signal readout. The electronic shutter function has made an exposure time of 1/10 000 seconds possible. Further, this device has the features of high sensitivity, low noise, broad dynamic range, and low smear. This device has a total of 320 589 pixels (537 horizontal x 597 vertical) and provides stable and clear images with a resolution of 330 horizontal TV-lines and 420 vertical TV-lines. Part Number Size System Color or B/W PAL Color
(Top View)
Pin Assignments
V4 V3 V2 V1 NC GND VO
1 2 3 4 5 6 7
14 13 12 11 10 9 8
H2 H1 R PT Sub GND VDD
MN39217FH 4.5 mm (type-1/4)
Features
* Effective pixel number 500 (horizontal) x 582 (vertical) * High sensitivity * Broad dynamic range * Low smear * Electronic shutter
Applications
* Camcorders
Publication date: September 2002
SMD00012BEC
1
MN39217FH
Block Diagram
(7 columns OB + 500 columns valid area + 30 columns OB)
1
(1 dummy + OB14 + valid area 582 + OB1 )
V4 2 V3 3 4
V2
Photo diode
GND VO VDD
6 7 8
Output section
Vertical shift register
V1
10 Sub 11 PT 9 GND
Horizontal shift register (Top 16 dummies)
12
14 H2
Pin No. Symbol 8 9 10 11 12 13 14 VDD GND Sub PT R H1 H2 Description
Pin Descriptions
Pin No. Symbol 1 2 3 4 5 6 7 V4 V3 V2 V1 NC GND VO Description Power supply GND Substrate P-well for protection circuit Reset pulse (RG) Horizontal register clock pulse 1 Horizontal register clock pulse 2 Vertical shift register clock pulse 4 Vertical shift register clock pulse 3 Vertical shift register clock pulse 2 Vertical shift register clock pulse 1 NC GND Video output
Device Parameter (H x V)
Parameter Pixel number
*
Value 500 x 582 3.599 x 2.698 7.30 x 4.70
Unit pixel mm2 m2
Image sensing block dimension Pixel dimension
Note) *: OB columns are not included.
2
SMD00012BEC
H1
R
NC
13
5
MN39217FH
Absolute Maximum Ratings and Operating Conditions
Absolute maximum rating Parameter VDD VPT
*3, 4
Operating condition Min 14.5 -8.3 3.0 Typ 15.0 -8.0 0 3.3 Max 15.5 -7.7 3.6 Unit V V V V V 3.3 0 3.3 0 3.6 0.05 3.6 0.05 V V V V V 23.0 15.0 0 -8.0 0 -8.0 15.0 0 -8.0 0 -8.0 25 24.0 15.5 0.2 -7.7 0.2 -7.7 15.5 0.2 -7.7 0.2 -7.7 V V V V V V V V V V V C C
Lower limit - 0.2 -10.0 - 0.2 - 0.2 - 0.2
Upper limit 18.0 0.2
GND VR VH1 VH2 VSub
*2 *1
(Reference voltage) High-Low Bias High Low High Low 8.0 8.0 8.0
(Supplied internally) 3.0 - 0.05 3.0 - 0.05 (Supplied internally) 45.0 18.0 15.0 18.0 15.0 60 80 22.0 14.5 - 0.2 -8.3 - 0.2 -8.3 14.5 - 0.2 -8.3 - 0.2 -8.3 -9.0 -9.0 -9.0 -9.0 -10 -30
VSub VV1
*3, 4
High Middle Low
VV2 VV3
*3, 4
Middle Low
*3, 4
High Middle Low
VV4
*3, 4
Middle Low
Operating temperature Storage temperature
SMD00012BEC
3
MN39217FH
Absolute Maximum Ratings and Operating Conditions (continued)
Note) 1. Standard photo detecting condition Standard photo detecting condition stands for detecting image with a light source of color temperature of 2 856K, luminance of 1 050 cd/m2, and using a color temperature conversion filter LB-40 (HOYA), infrared cut filter CAW-500S with thickness 2.5 mm for a light path and with F8 lens aperture. The quantity of the incidental light to a photo-detecting surface under the above condition is defined as the standard quantity of light. 2. *1: VSub when using electronic shutter function
VSub H VSub (V) VSub L GND VSub (V) (Supplied internally)
* Sub pulse generates once every 1 V period.
*2: VSub supplied internally is the voltage suppressing the blooming generation at x1 000 light quantity relative to the standard light quantity. *3: Relation between VPT and VVL Set VPT under the following condition against VL of a vertical transfer clock waveform. VPT VL (VV1L to VV4L) *4: Absolute maximum ratings - 0.2 < VSub - VPT < 55 (V) - 0.2 < VV - VPT < 24.5 (V)
Optical Characteristics
Parameter S/N ratio (dark) Sensitivity Symbol S/Nd So So Carrier saturation output Vertical smear Sc Sm Conditions Dark condition J chart F8 J chart F1.4 Carrier maximum output 1/10 V chart, F1.4 Min 57 340 220 550 Typ 60 380 250 600 Max 0.01 Unit dB mV mV mV %
4
SMD00012BEC
MN39217FH
Color Filter Arrays on CCD
582 581 Cy Mg Ye G Cy Mg Ye G Cy Mg Ye G Cy Mg Ye G Cy Mg Ye G
8 7 6 5 4 3 2 1
Cy G Cy Mg Cy G Cy Mg 1
Ye Mg Ye G Ye Mg Ye G 2
Cy G Cy Mg Cy G Cy Mg 3
Ye Mg Ye G Ye Mg Ye G 4
Cy G Cy Mg Cy G Cy Mg 5
Ye Mg Ye G Ye Mg Ye G 6
Cy G Cy Mg Cy G Cy Mg 7
Ye Mg Ye G Ye Mg Ye G 8
Cy G Cy Mg Cy G Cy Mg
Ye Mg Ye G Ye Mg Ye G
499 500
Graph of Characteristics
CCD on-chip color filter spectral characteristics
1.2
Ye 1.0
0.8
Transmittance
0.6 Cy Gr
0.4 Mg
0.2
0 400
450
500
550
600
650
700
750
800
Wavelength (nm) SMD00012BEC
5
MN39217FH
Timing Diagram
V1 , V3
0.9
0.9
0.1 0.9
0.1 0.9
0.1 300 ns V2 , V4 300 ns 300 ns
0.1 300 ns
0.9
0.9
0.1 300 ns H1 , H2 , R 0.9 0.9
0.1 300 ns DS1, DS2
0.9
0.9
0.1 10 ns
0.1 10 ns
0.1 10 ns
0.1 10 ns
6
SMD00012BEC
MN39217FH
Timing Diagram (continued)
* CMOS pulse timing
H1
50%
50%
50%
52 ns 3 ns
CCD output
R
50%
50%
-2 ns 10 ns
26 ns 3 ns
Clamp pulse (DS1)
50%
50%
8 ns 5 ns
26 ns 3 ns
Sampling pulse (DS2)
50%
50%
8 ns 5 ns
26 ns 3 ns
SMD00012BEC
7
MN39217FH
Package Dimensions (unit: mm)
* WDIP014-P-0400H
10.000.08 9.000.10 5.000.08 14 8
5.000.08 9.000.10 10.000.08
Reference plane
0.015
Valid pixel center
(0.60)
3.500.20 1.300.10
(1.19)
1.27
0.300.05
0.3 M
1
(2.50)
7
2-R0.40 (depth 0.30)
14
8
1. The center of the package is equal to the center of the effective pixel area. 2. The rotation angle of the effective pixel area: up to 1.0 degree 3. The distance from the bottom face of the package to the surface of the effective pixel area: 1.41 mm 0.1 mm 4. The tilt of the effective pixel area for the bottom face of the package: up to 25 m 5. Thickness of seal glass is 0.7 mm 0.1 mm, and the refractive index is 1.50. 6. Package weight: 0.55 g (typ.)
8
(2.50)
SMD00012BEC
3.30.15
(1.30)
0.250.05
(0.7)
1
7
10.160.25
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL


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